(2012)
Comprehensive Study about the Effect of Heat Treatment on the Electrical Properties of Single-Crystalline ZnO Materials.
APPLIED PHYSICS EXPRESS.
5,
7
(2012)
Gain recovery in a quantum dot semiconductor optical amplifier and corresponding pattern effects in amplified optical signals at 1.5 mu m.
OPTICS EXPRESS.
20,
6
(2011)
Gain dynamics of an InAs/InGaAsP quantum dot semiconductor optical
amplifier operating at 1.5 um.
APPLIED PHYSICS LETTERS.
98,
(2010)
An efficient in-plane energy level shift in InAs/InGaAsP/InP quantum dots
by selective area growth.
JOURNAL OF APPLIED PHYSICS.
107,
(2010)
Luminescence Characteristics of InGaAs/GaAs Quantum Dots Emitting Near 1.5 um.
JOURNAL OF THE KOREAN PHYSICAL SOCIETY.
56,
2
(2009)
DLTS Study of InGaAs/InGaAsP Double-layered QDs with Various Spacer Layers.
JOURNAL OF THE KOREAN PHYSICAL SOCIETY.
55,
2
(2009)
Enhancement of structural and optical properties of 1.3 μm InGaAs/GaAs quantum dots through the growth of barrier at an elevated temperature.
JOURNAL OF THE KOREAN PHYSICAL SOCIETY.
(2008)
Study on the Energy level Properties of InGaAs/InGaAsP Self-AssembledQuantum Dots with Two Different Sizes.
JOURNAL OF THE KOREAN PHYSICAL SOCIETY.
53,
5
(2008)
High-speed wavelength conversion in quantum dot and quantum well semiconductor optical amplifiers.
APPLIED PHYSICS LETTERS.
92,
(2008)
Multimode Lasing Characteristics of Quantum Dot Lasers due to Inhomogeneously Broadened Gain.
JOURNAL OF THE KOREAN PHYSICAL SOCIETY.
52,
2
(2008)
Enhancement of Luminescence Properties of InGaAs/GaAs Quantum Dots by Control of AsH3 Overpressure during Growth Interruption.
JOURNAL OF THE KOREAN PHYSICAL SOCIETY.
52,
1
(2007)
Long-Wavelength Emission at 1.5 um from InGaAs/GaAs Quantum Dots.
JOURNAL OF THE KOREAN PHYSICAL SOCIETY.
51,
6
(2007)
Electrically tunable slow and fast lights in a quantum-dot semiconductor optical amplifier near 1.55 um.
OPTICS LETTERS.
32,
19
(2007)
Gain characteristics of InAs/InGaAsP quantum dot semiconductor optical amplifiers at 1.5 um.
APPLIED PHYSICS LETTERS.
90,
(2007)
Effects of band-offset on the carrier lifetime in InAs quantum dots on InP substrates.
JOURNAL OF APPLIED PHYSICS.
101,
(2007)
Comparison of Carrier Lifetime for InAs quantum dots in the Quaternary Barriers on InP Substrate.
AIP Conference Proceedings.
893,
(2007)
Direct observation of electronic couplings between 1.5um emitting InGaAs/InGaAsP quantum dots on InP.
AIP Conference Proceedings.
893,
(2006)
Reliability in the oxide vertical cavity surface emitting lasers exposed to electrostatic discharge.
OPTICS EXPRESS.
14,
25
(2006)
Semiconductor Quantum Dots Emitting at 1.5 um: Optical Properties and Device Applications.
JOURNAL OF THE KOREAN PHYSICAL SOCIETY.
48,
6
(2006)
Strong photoluminescence at 1.3 um with a narrow linewidth from nitridized InAs/GaAs quantum dots.
APPLIED PHYSICS LETTERS.
88,
학술회의논문
(2012)
GaN계 LED의 hole injection 개선 방법에 대한 연구.
한국물리학회 회보.
대한민국
(2012)
InGaN/GaN 양자우물과 barrier 스트레인이 LED 광출력에 미치는 영향에 대한 연구.
한국물리학회 회보.
대한민국
(2010)
Ultrafast gain and phase dynamics of InAs/InGaAsP quantum dot semiconductor optical amplifier at 1.5 um.
한국물리학회 2010년 가을학술논문발표회.
대한민국
(2010)
Gain and phase dynamics of InAs/InGaAsP QDSOA at 1.5 um.
30th International Conference on the Physics of Semiconductors.
대한민국
(2010)
반도체 양자점을 이용한 Raman Amplified Semiconcudtor Optical Amplifier(RASOA).
한국물리학회 2010년 봄학술논문발표회.
대한민국
(2009)
Metalorganic chemical vapor deposition of GaN on n-type Ga2O3 substrates for vertical-type light-emitting diodes.
The 8th International Conference on Nitride Semiconductors.
대한민국
(2009)
160 GHz wavelength conversion using four-wave mixing in quantum dots.
CLEO/IQEC 2009 Proceedings.
미국
(2009)
Gain and High Speed Transmission Characteristics of InAs/InP Quantum Dot Semiconductor Optical Amplifiers.
OFC/NFOEC 2009.
미국
(2008)
Characteristics of InAs/InP quantum dot lasers and semiconductor optical amplifiers.
The 5th International Conference on Semiconductor Quantum Dots.
대한민국
(2008)
Current density dependent gain peak shift of InAs/InGaAsP/InP quantum dot at 1.5 um.
The 14th International Symposium on the Physics of Semiconductors and Applications.
대한민국
(2008)
Gain characteristics of quantum dot semiconductor optical amplifiers.
The 14th International Symposium on the Physics of Semiconductors and Applications.
대한민국
(2008)
Optical characcteristics of InAs/InGaAsP/InP quantum dot semiconductor optical amplifiers.
2008 International Nano-Optoelectronics Workshop.
일본
(2008)
Inhomogeneous lasing characteristics of InAs/InGaAsP quantum dot laser diodes at 15 K and 300 K.
2008 International Nano-Optoelectronics Workshop.
일본
(2008)
Comparison of four-wave mixing in quantum dots and quantum wells for wavelength conversion.
CLEO/QELS Conference 2008.
미국
(2008)
Cavity length dependent lasing wavelength of the In(Ga)As/InGaAsP/InP semiconductor quantum dot laser diode.
한국물리학회 봄 학술논문 발표회.
대한민국
(2008)
Polarization dependence of edge micro-photoluminescence in InAs/InGaAsP Quantum dots emitting at 1.5μm.
한국물리학회 학술발표회의 논문집.
대한민국
(2008)
도파로를 이용한 양자점의 흡수 스펙트럼 측정.
한국물리학회 봄 학술논문 발표회.
대한민국
(2008)
Gain characteristics of InAs/InGaAsP quantum dot laser diode at low temperatures.
The 5th International Conference on Semiconductor Quantum Dots.
대한민국
(2008)
In-plane energy level shift over 100 meV in InAs/InGaAsP quantum dots by selective area growth.
The 5th International Conference on Semiconductor Quantum Dots.
대한민국
(2008)
Linewidth enhancement factor of an InAs/InAsGaP/InP quantum dot semiconductor optical amplifier.
The 5th International Conference on Semiconductor Quantum Dots.
대한민국
